Open Access

Nature-based interventions have a potential to activate and rehabilitate youth facing challenges with social, mental, or physical functioning. In Finland, nature-based interventions have been integrated into youth workshops to foster sustainable well-being. Using an exploratory mixed-methods design, this study explores the value of nature-based interventions for the well-being of Finnish youth outside education or employment. Participants (N = 18, aged 20-26) were drawn from three nature-based youth workshops. Sixteen participants completed survey questionnaires assessing the cognitive and social outcomes of the interventions and the key elements contributing to their effectiveness. Nine participants took part in qualitative interviews. Thematic analysis of the interview data revealed that the interventions promoted factors supporting well-being, including physical activity, structure and routine, skill development, social belonging, and meaningful participation. Participants also reported enhanced connections with nature and sustainable lifestyles. Central to these well-being experiences were the therapeutic benefits of nature, meaningful nature-related activities, and supportive social contexts. This study provides valuable insights for social workers and social service professionals to leverage nature for health and social outcomes among marginalized youth. Future research should investigate young people’s preferred environments and activities toward developing tailored nature-based interventions that promote positive well-being experiences.

The thermal stability of thick (≈4 μm) plasma-grown hydrogenated amorphous silicon (a-Si:H) layers on glass upon application of a rather rapid annealing step is investigated. Such films are of interest as precursor layers for laser liquid-phase crystallized silicon solar cells. However, at least half-day annealing at T ≈550 °C is considered to be necessary so far to reduce the hydrogen (H) content and thus avoid blistering and peeling during the crystallization process due to H. By varying the deposition conditions of a-Si:H, layers of rather different thermal stability are fabricated. Changes in the surface morphology of these a-Si:H layers are investigated using scanning electron microscopy and profilometry measurements. Hydrogen effusion, secondary-ion mass spectrometry (SIMS) depth profiling, and Raman spectroscopy measurements are also carried out. In summary, amorphous silicon precursor layers are fabricated that can be heated within 30 min to a temperature of 550 °C without peeling and major surface morphological changes. Successful laser liquid-phase crystallization of such material is demonstrated. The physical nature of a-Si:H material stability/instability upon application of rapid heating is studied.

The application of thin underdense hydrogenated amorphous silicon (a-Si:H) films for passivation of crystalline Si (c-Si) by avoiding epitaxy in silicon heterojunction (SHJ) solar cell technology has recently been proposed and successfully applied. Herein, the microstructure of such underdense a-Si:H films, as used in our silicon heterojunction solar cell baseline, is investigated mainly by Raman spectroscopy, effusion, and secondary ion mass spectrometry. In H effusion experiments, a low-temperature (near 400 °C) effusion peak which has been attributed to the diffusion of molecular H2 through a void network is seen. The dependence of the H effusion peaks on film thickness is similar as observed previously for void rich, low substrate-temperature a-Si:H material. Solar cells using underdense a-Si:H as i1-layer with a maximum efficiency of 24.1% are produced. The passivation quality of the solar cells saturates with increasing i1-layer thickness. The fact that with such underdense material combined with a following high-quality i2-layer, instead of only high-quality a-Si:H with a low defect density direct on the c-Si substrate, good passivation of c-Si solar cells is achieved, which demonstrates that in the passivation process, molecular hydrogen plays an important role.

In silicon heterojunction solar cell technology, thin layers of hydrogenated amorphous silicon (a-Si:H) are applied as passivating contacts to the crystalline silicon (c-Si) wafer. Thus, the properties of the a-Si:H is crucial for the performance of the solar cells. One important property of a-Si:H is its microstructure which can be characterized by the microstructure parameter R based on Si─H bond stretching vibrations. A common method to determine R is Fourier transform infrared (FTIR) absorption measurement which, however, is difficult to perform on solar cells for various reasons like the use of textured Si wafers and the presence of conducting oxide contact layers. Here, it is demonstrated that Raman spectroscopy is suitable to determine the microstructure of bulk a-Si:H layers of 10 nm or less on textured c-Si underneath indium tin oxide as conducting oxide. A detailed comparison of FTIR and Raman spectra is performed and significant differences in the microstructure parameter are obtained by both methods with decreasing a-Si:H film thickness.

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For application as precursor layers for silicon solar cells fabricated by laser liquid phase crystallization, thick amorphous silicon films on glass are of interest. However, for hydrogenated amorphous silicon (a-Si:H) precursor layers containing about 10 at.% hydrogen, hydrogen needs to be removed prior to liquid phase crystallization to avoid bubble formation and peeling. For this purpose, an at least 12 hours annealing procedure up to 550°C is considered necessary thus involving long process time and high costs. In this article, we investigate the use of thick hot wire grown a-Si:H films which turn out to need considerably less time for dehydrogenation than dense plasma-grown a-Si:H. The dehydrogenation process is studied by depth profiles of hydrogen concentration and medium range order (MRO) using Raman spectroscopy analysis at etch pits. The results show already at an annealing temperature of 450°C the disappearance of all detectable H in the substrate-near part and the complete removal of H at 550°C after about 4 hours annealing. We attribute this rather fast hydrogen removal to the formation of interconnected voids primarily in the substrate-near range. In the same range of the film, we find a correlation between hydrogen concentration and medium range order suggesting that a silicon network reconstruction due to hydrogen out-diffusion causes an observed decrease of reciprocal MRO. The results stress the importance of void-related microstructure in the a-Si:H for hydrogen removal at a rather low annealing temperature and short annealing time. Our results suggest that hot wire a-Si:H films which can be grown with a high deposition rate and a rather pronounced void-related microstructure may be well suited as economic precursor layers.

Silicon carbide (SiC) is an established material for photovoltaics and other semiconductor devices due to its wide band gap and high thermal stability. Traditional deposition systems for thin, doped SiC layers are often costly and complex. This study investigates the use of 1,4-disilabutane as a low-cost liquid precursor with a rather low decomposition temperature for the deposition of hydrogenated amorphous silicon carbide (a-SiC:H) films at atmospheric pressure. Nitrogen doping was achieved using 1,1,3,3-tetramethyldisilazane. The films were characterized by Fourier-transform infrared spectroscopy, Raman spectroscopy, secondary ion mass spectrometry, and conductivity measurements. Optimizing the deposition temperature maximized the Si–C bond density. Crystallization was induced by annealing at temperatures between 800 and 1100 °C, resulting in a three-order-of-magnitude increase in conductivity. The highest conductivity achieved was 0.03 S cm–1 for crystalline, N-doped SiC films. This cost-effective method for producing highly conductive, crystalline SiC films offers significant potential for industrial applications.

Eating behavior is shaped by individual, societal, and cultural factors. Gender stereotypes (GS) influence the symbolic meaning of food and may play a role in dietary choices. While international research has explored these associations, empirical data from German-speaking countries is scarce. The GenderDish I study aimed to examine existing GS related to food and eating behavior through a nationwide anonymous online survey conducted in Germany in August and September 2024. A total of 1,430 individuals participated (67% female, 33% male). The 73-item questionnaire addressed taste preferences, cooking skills, dietary patterns, and gender-related food perceptions, using established instruments to assess femininity, masculinity, and social desirability. In this sample, meat, beer, and hearty meals were more commonly associated with men, while plant-based, sweet, and light foods were linked to women. Women more frequently reported vegetarian or vegan diets, greater dietary experience, and higher health awareness. In contrast, men tended to prefer spicy, fatty foods and expressed a stronger desire for muscle gain. Regarding domestic responsibilities, women more often saw themselves as primarily responsible, while men more frequently supported equal division. The sample was not representative, as most participants were female, from western Germany (>77%), childless (83%) and highly educated (44%). Additionally, as with any voluntary online survey without direct invitation to participate, self-selection bias cannot be excluded. Nevertheless, this is the first survey of its size and scope in Germany, and within this specific group, the results suggest that food-related behaviors and perceptions may still be influenced by GS in Germany, with male-associated stereotypes appearing particularly persistent. Gender-sensitive nutrition education could be a valuable approach to addressing such stereotypes and encouraging more inclusive and health-promoting eating behaviors.