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6th Laser Ceramics Symposium
(2012)
Efficient quasi-three-level laser operation requires the generation of the highest possible pump rate from a given pump source. We derive the fundamental scaling laws for the pump rate and we extract optimization criteria for pump concepts from these laws. The analysis is then applied to the thin-disk laser. Based on the results, a novel pump concept for thin-disk lasers is proposed, which allows for several tens of pump beam passes and reduces the optical complexity of conventional pump concepts. Furthermore, the beam quality of the pump source is preserved almost completely, facilitating the highest possible pump rate.
We summarise the discussions at a virtual Community Workshop on Cold Atoms in Space concerning the status of cold atom technologies, the prospective scientific and societal opportunities offered by their deployment in space, and the developments needed before cold atoms could be operated in space. The cold atom technologies discussed include atomic clocks, quantum gravimeters and accelerometers, and atom interferometers. Prospective applications include metrology, geodesy and measurement of terrestrial mass change due to, e.g., climate change, and fundamental science experiments such as tests of the equivalence principle, searches for dark matter, measurements of gravitational waves and tests of quantum mechanics. We review the current status of cold atom technologies and outline the requirements for their space qualification, including the development paths and the corresponding technical milestones, and identifying possible pathfinder missions to pave the way for missions to exploit the full potential of cold atoms in space. Finally, we present a first draft of a possible road-map for achieving these goals, that we propose for discussion by the interested cold atom, Earth Observation, fundamental physics and other prospective scientific user communities, together with the European Space Agency (ESA) and national space and research funding agencies.
Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus
(2009)
The study is concerned with the effect of short-term high-temperature heating on Si:Se and Si:S samples, whose surface layers are doped with phosphorus to high concentrations. It is found that the resistivity of the wafers substantially increases deep in the bulk within up to similar to 10 mu m. The experimental data suggest that this effect is due to enhanced diffusion of chalcogen in the presence of the phosphorus-doped surface region. The mechanism of the effect is the injection of nonequilibrium interstitial silicon atoms from the layer heavily doped with phosphorus to the bulk of the sample. This results in a shift of the equilibrium between the concentrations of substitutional and interstitial impurity atoms towards higher concentrations of interstitials and, as a consequence, towards the increase in the relative content of the fast-diffusing interstitial component of the impurity.
In this work, the authors report on investigations of two-photon lithography of positive photoresist. The dependency of the pattern linewidth on variation in the processing parameters, like the laser patterning velocity or power of the femtosecond laser oscillator, is presented. The influence of the scan velocity between 0.38 and 1.90 mm/s on the resolution is discussed for a layer thickness of 3.5 μm. By using a commercial positive photoresist, an aspect ratio of 5 has been realized for grid structures and the qualities of the produced structures are discussed.
Kostenfaktor Mensch
(2007)