Modification of GaAs surface by low-current Townsend discharge
- The influence of stationary spatially homogeneous Townsend discharge on the (1 0 0) surface of semi-insulating GaAs samples is studied. Samples exposed to both electrons and ions in a nitrogen discharge
| Author: | E. L. Gurevich, S. Kittel, R. Hergenröder, Yu A. Astrov, L. M. Portsel, A. N. Lodygin, V. A. Tolmachev, A. V. Ankudinov |
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| DOI: | https://doi.org/10.1088/0022-3727/43/27/275302 |
| ISSN: | 0022-3727 |
| Parent Title (English): | J. Phys. D: Appl. Phys. |
| Document Type: | Article |
| Language: | English |
| Year of Completion: | 2010 |
| Year of first Publication: | 2010 |
| Release Date: | 2019/11/07 |
| Volume: | 43 |
| First Page: | 275302 |
| Faculties: | Physikingenieurwesen (PHY) |
| Publication list: | Gurevich, Evgeny |
| Licence (German): |  Bibliographische Daten |