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Silicon microprotrusions with tailored chirality enabled by direct femtosecond laser ablation
(2020)
Here, we report on formation of nanoprotrusions on the surface of a bulk crystalline silicon wafer under femtosecond-laser ablation with a donut-shaped laser beam. By breaking circular symmetry of the irradiating donut-shaped fs-pulse beam, a switch in geometry of the formed surface nanoprotrusions from regular to chiral was demonstrated. The chirality of the obtained Si nanostructures was promoted with an asymmetry degree of the laser beam. An uneven helical flow of laser-melted Si caused by asymmetry of the initial intensity and temperature pattern on the laser-irradiated Si surface explains this phenomenon. Chirality of the formed protrusions was confirmed by visualizing cross-sectional cuts produced by focused ion beam milling as well as Raman activity of these structures probed by circularly polarized light with opposite handedness. Our results open a pathway towards easy-to-implement inexpensive …
Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus
(2009)
The study is concerned with the effect of short-term high-temperature heating on Si:Se and Si:S samples, whose surface layers are doped with phosphorus to high concentrations. It is found that the resistivity of the wafers substantially increases deep in the bulk within up to similar to 10 mu m. The experimental data suggest that this effect is due to enhanced diffusion of chalcogen in the presence of the phosphorus-doped surface region. The mechanism of the effect is the injection of nonequilibrium interstitial silicon atoms from the layer heavily doped with phosphorus to the bulk of the sample. This results in a shift of the equilibrium between the concentrations of substitutional and interstitial impurity atoms towards higher concentrations of interstitials and, as a consequence, towards the increase in the relative content of the fast-diffusing interstitial component of the impurity.
The mechanisms of femtosecond laser-induced transient melting and atomic mixing in a target composed of a 30 nm Au film deposited on a bulk Cu substrate are investigated in a series of atomistic simulations. The relative strength and the electron temperature dependence of the electron-phonon coupling of the metals composing the layered target are identified as major factors affecting the initial energy redistribution and the location of the region(s) undergoing transient melting and resolidification. The higher strength of the electron-phonon coupling in Cu, as compared to Au, results in a preferential sub-surface heating and melting of the Cu substrate, while the overlaying Au film largely retains its original crystalline structure. The large difference in the atomic mobility in the transiently melted and crystalline regions of the target makes it possible to connect the final distributions of the components in the resolidified targets to the history of the laser-induced melting process, thus allowing for experimental verification of the computational predictions. (C) 2009 Elsevier B. V. All rights reserved.
The potential use of an EMG-20 mass-spectrometric gas analyzer for process control and safe operation and environmental monitoring in metallurgy (oxygen converter process) is considered. The EMG-20 parameters are adequate for rapid, automatic on-line analysis of metallurgical waste gases. A multichannel system of sampling. sample preparation, and transportation of sampled gases for analysis is proposed.
