Modification of GaAs surface by low-current Townsend discharge
- The influence of stationary spatially homogeneous Townsend discharge on the (1 0 0) surface of semi-insulating GaAs samples is studied. Samples exposed to both electrons and ions in a nitrogen discharge
Author: | E. L. Gurevich, S. Kittel, R. Hergenröder, Yu A. Astrov, L. M. Portsel, A. N. Lodygin, V. A. Tolmachev, A. V. Ankudinov |
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DOI: | https://doi.org/10.1088/0022-3727/43/27/275302 |
ISSN: | 0022-3727 |
Parent Title (English): | J. Phys. D: Appl. Phys. |
Document Type: | Article |
Language: | English |
Year of Completion: | 2010 |
Year of first Publication: | 2010 |
Release Date: | 2019/11/07 |
Volume: | 43 |
First Page: | 275302 |
Faculties: | Physikingenieurwesen (PHY) |
Publication list: | Gurevich, Evgeny |
Licence (German): | Bibliographische Daten |