Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between, <b>United States Patent</b>

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Author:Hans-Joachim Schulze, Franz-Josef Niedernostheide, Reinhart Job
Subtitle (English):Nov. 18
Document Type:Mitarbeit an einer DIN-Norm, Richtlinie, RFC
Language:English
Year of Completion:2014
Year of first Publication:2014
Release Date:2019/01/11
Note:
US008889531B2
Institutes:Elektrotechnik und Informatik (ETI)
Publication list:Job, Reinhart
Licence (German):License Logo Bibliographische Daten