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Author
Johannes, G.
(7)
Job, Reinhart
(6)
Schulze, Hans-Joachim
(5)
Niedernostheide, Franz-Josef
(4)
Jelinek, Moriz
(3)
Laven, Reinhart
(3)
Schustereder, Hans-Joachim
(3)
Job, Hans-Joachim
(2)
Job, Werner
(2)
Rommel, Lothar
(2)
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2012
(5)
2014
(4)
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(4)
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Title
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Author
Defect Engineering for Modern Power Devices
(2012)
Job, Reinhart
;
Johannes, G.
;
Laven, Franz-Josef
;
Niedernostheide, Hans-Joachim
;
Schulze, Holger
;
Schulze, Werner
Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles
(2011)
Johannes, G.
;
Laven, Reinhart
;
Job, Werner
;
Schustereder, Hans-Joachim
;
Schulze, Franz-Josef
;
Niedernostheide, Holger
;
Schulze, Lothar
Metastable Defects in Proton Implanted and Annealed Silicon
(2016)
Jelinek, Moriz
;
Johannes, G.
;
Laven, Naveen
;
Ganagona, Goud
;
Job, Reinhart
;
Schustereder, Werner
;
Schulze, Hans-Joachim
;
Rommel, Matthias
;
Frey, Lothar
The Thermal Budget of Hydrogen-related Donor Profiles: Diffusion-limited Activation and Thermal Dissociation
(2012)
Johannes, G.
;
Laven, Reinhart
;
Job, Hans-Joachim
;
Schulze, Franz-Josef
;
Niedernostheide, Werner
;
Schustereder, Lothar
DLTS Characterization of Proton Implanted Silicon under Varying Annealing Conditions
(2014)
Johannes, G.
;
Laven, Moriz
;
Jelinek, Reinhart
;
Job, Hans-Joachim
;
Schulze, Werner
;
Schustereder, Stefan
;
Kirnstötter, Mathias
;
Rommel, Lothar
Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon
(2014)
Jelinek, Moriz
;
Johannes, G.
;
Laven, Mathias
;
Rommel, Werner
;
Schustereder, Hans-Joachim
;
Schulze, Lother
;
Frey, Reinhart
A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime
(2014)
Jelinek, Moriz
;
Johannes, G.
;
Laven, Reinhart
;
Job, Werner
;
Schustereder, Hans-Joachim
;
Schulze, Mathias
;
Rommel, Lothar
Semiconductor body with strained region, <b>United States Patent </b>
(2012)
Schulze, Hans-Joachim
;
Niedernostheide, Franz-Josef
;
Job, Reinhart
Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between, <b>United States Patent</b>
(2014)
Schulze, Hans-Joachim
;
Niedernostheide, Franz-Josef
;
Job, Reinhart
Halbleiterkörper mit verspannten Bereich, <b>Deutsches Patent</b>
(2012)
Job, Reinhart
;
Niedernostheide, Franz-Josef
;
Schulze, Hans-Joachim
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