TY  - JOUR
A1  - Job, Reinhart
A1  - Johannes, G.
A1  - Laven, Franz-Josef
A1  - Niedernostheide, Hans-Joachim
A1  - Schulze, Holger
A1  - Schulze, Werner
T1  - Defect Engineering for Modern Power Devices
JF  - Physica Status Solidi (a)
Y1  - 2012
VL  - 209
SP  - 1940
EP  - 1949
ER  - 
TY  - CHAP
A1  - Johannes, G.
A1  - Laven, Reinhart
A1  - Job, Hans-Joachim
A1  - Schulze, Franz-Josef
A1  - Niedernostheide, Werner
A1  - Schustereder, Lothar
T1  - The Thermal Budget of Hydrogen-related Donor Profiles: Diffusion-limited Activation and Thermal Dissociation
T2  - E. Simoen, C. L. Claeys, P. Stallhofer, R. Falster, C. Mazuré (Editors): High Purity Silicon 12, ECS Transactions <u>50</u>(5)
Y1  - 2012
SP  - 161
EP  - 175
ER  - 
TY  - JOUR
A1  - Johannes, G.
A1  - Laven, Reinhart
A1  - Job, Werner
A1  - Schustereder, Hans-Joachim
A1  - Schulze, Franz-Josef
A1  - Niedernostheide, Holger
A1  - Schulze, Lothar
T1  - Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles
JF  - Solid State Phenomena
Y1  - 2011
VL  - 178-179
SP  - 375
EP  - 384
ER  - 
TY  - JOUR
A1  - Johannes, G.
A1  - Laven, Reinhart
A1  - Job, Hans
A1  - Schulze, -Joachim
A1  - Niedernostheide, Franz-Josef
A1  - Schustereder, Werner
A1  - Frey, Lothar
T1  - Activation and Dissociation of Proton-Induced Donor Profiles in Silicon
JF  - ECS Journal of Solid State Science and Technology
Y1  - 2013
VL  - 2
IS  - 9
SP  - 389
EP  - 394
ER  - 
TY  - GEN
A1  - Schulze, Hans-Joachim
A1  - Niedernostheide, Franz-Josef
A1  - Job, Reinhart
T1  - Semiconductor body with strained region, <b>United States Patent </b>
BT  - May 10
Y1  - 2012
N1  - US2012011242A1
ER  - 
TY  - GEN
A1  - Schulze, Hans-Joachim
A1  - Niedernostheide, Franz-Josef
A1  - Job, Reinhart
T1  - Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between, <b>United States Patent</b>
BT  - Nov. 18
Y1  - 2014
N1  - US008889531B2
ER  - 
TY  - GEN
A1  - Job, Reinhart
A1  - Niedernostheide, Franz-Josef
A1  - Schulze, Hans-Joachim
T1  - Halbleiterkörper mit verspannten Bereich, <b>Deutsches Patent</b>
BT  - 22. März
Y1  - 2012
N1  - DE102010046215A1
ER  - 
TY  - GEN
A1  - Schulze, Hans-Joachim
A1  - Niedernostheide, Franz-Josef
A1  - Job, Reinhart
T1  - Semiconductor body with strained region, <b>Chinesisches Patent</b>
BT  - Apr. 11
Y1  - 2012
N1  - CN102412259A
ER  -