TY  - GEN
A1  - Schulze, Hans-Joachim
A1  - Niedernostheide, Franz-Josef
A1  - Job, Reinhart
T1  - Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between, <b>United States Patent</b>
BT  - Nov. 18
Y1  - 2014
N1  - US008889531B2
ER  - 
TY  - GEN
A1  - Schulze, Hans-Joachim
A1  - Niedernostheide, Franz-Josef
A1  - Job, Reinhart
T1  - Semiconductor body with strained region, <b>United States Patent </b>
BT  - May 10
Y1  - 2012
N1  - US2012011242A1
ER  - 
TY  - GEN
A1  - Schulze, Hans-Joachim
A1  - Niedernostheide, Franz-Josef
A1  - Job, Reinhart
T1  - Semiconductor body with strained region, <b>Chinesisches Patent</b>
BT  - Apr. 11
Y1  - 2012
N1  - CN102412259A
ER  - 
TY  - GEN
A1  - Job, Reinhart
A1  - Niedernostheide, Franz-Josef
A1  - Schulze, Hans-Joachim
T1  - Halbleiterkörper mit verspannten Bereich, <b>Deutsches Patent</b>
BT  - 22. März
Y1  - 2012
N1  - DE102010046215A1
ER  -