@article{ThomasLinZhigileietal.2009, author = {Thomas, D. A. and Lin, Z. and Zhigilei, L. V. and Gurevich, E. L. and Kittel, S. and Hergenr{\"o}der, R.}, title = {Atomistic modeling of femtosecond laser-induced melting and atomic mixing in Au film - Cu substrate system}, series = {Appl. Surf. Sci.}, volume = {255}, journal = {Appl. Surf. Sci.}, issn = {0169-4332}, doi = {10.1016/j.apsusc.2009.04.079}, pages = {9605 -- 9612}, year = {2009}, abstract = {The mechanisms of femtosecond laser-induced transient melting and atomic mixing in a target composed of a 30 nm Au film deposited on a bulk Cu substrate are investigated in a series of atomistic simulations. The relative strength and the electron temperature dependence of the electron-phonon coupling of the metals composing the layered target are identified as major factors affecting the initial energy redistribution and the location of the region(s) undergoing transient melting and resolidification. The higher strength of the electron-phonon coupling in Cu, as compared to Au, results in a preferential sub-surface heating and melting of the Cu substrate, while the overlaying Au film largely retains its original crystalline structure. The large difference in the atomic mobility in the transiently melted and crystalline regions of the target makes it possible to connect the final distributions of the components in the resolidified targets to the history of the laser-induced melting process, thus allowing for experimental verification of the computational predictions. (C) 2009 Elsevier B. V. All rights reserved.}, language = {en} } @article{GurevichKittelHergenroeder2012, author = {Gurevich, E. L. and Kittel, S. and Hergenr{\"o}der, R.}, title = {Experimental and numerical study of surface alloying by femtosecond laser radiation}, series = {Appl. Surf. Sci.}, volume = {258}, journal = {Appl. Surf. Sci.}, issn = {0169-4332}, pages = {2576 -- 2579}, year = {2012}, language = {en} } @article{GurevichKittelHergenroederetal.2010, author = {Gurevich, E. L. and Kittel, S. and Hergenr{\"o}der, R. and Astrov, Yu A. and Portsel, L. M. and Lodygin, A. N. and Tolmachev, V. A. and Ankudinov, A. V.}, title = {Modification of GaAs surface by low-current Townsend discharge}, series = {J. Phys. D: Appl. Phys.}, volume = {43}, journal = {J. Phys. D: Appl. Phys.}, issn = {0022-3727}, doi = {10.1088/0022-3727/43/27/275302}, pages = {275302}, year = {2010}, abstract = {The influence of stationary spatially homogeneous Townsend discharge on the (1 0 0) surface of semi-insulating GaAs samples is studied. Samples exposed to both electrons and ions in a nitrogen discharge}, language = {en} }