TY  - JOUR
A1  - Gurevich, E. L.
A1  - Kittel, S.
A1  - Hergenröder, R.
A1  - Astrov, Yu A.
A1  - Portsel, L. M.
A1  - Lodygin, A. N.
A1  - Tolmachev, V. A.
A1  - Ankudinov, A. V.
T1  - Modification of GaAs surface by low-current Townsend discharge
T2  - J. Phys. D: Appl. Phys.
N2  - The influence of stationary spatially homogeneous Townsend discharge on the (1 0 0) surface of semi-insulating GaAs samples is studied. Samples exposed to both electrons and ions in a nitrogen discharge
Y1  - 2010
UR  - https://www.hb.fh-muenster.de/opus4/frontdoor/index/index/docId/11329
SN  - 0022-3727
VL  - 43
SP  - 275302
ER  -