TY  - GEN
A1  - Schulze, Hans-Joachim
A1  - Niedernostheide, Franz-Josef
A1  - Job, Reinhart
T1  - Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between, <b>United States Patent</b>
Y1  - 2014
UR  - https://www.hb.fh-muenster.de/opus4/frontdoor/index/index/docId/7180
N1  - US008889531B2
ER  -